The rectification property of metalsemiconductor contacts was discovered by. Metalsemiconductor schottky barrier junctions and their. The scaling of transistors to sub10 nm dimensions is strongly limited by their contact resistance rc. Metalsemiconductor contacts display a range of electrical characteristics from strongly rectifying to ohmic, each having its own applications. Metalsemiconductor ohmic contacts stanford university. Log in with open athens, shibboleth, or your institutional credentials. Metalgermanium contacts and germanide formation mrs. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. At the same time, such contacts cannot be assumed to have a resistance as low as that of two connected metals. Properties that are significant to device operation for integrated circuit. What is contact resistance contact resistance refers to the resistance associated with the metal semiconductor barrier at the interface between the semiconductor and metal contact the contact resistance rc has units of ohms. Numerous and frequentlyupdated resource results are available from this search. Metal semiconductor contact anchit biswas techno india,saltlake 2.
Metal semiconductor contacts, pn junctions, bipolar transistors, and mos fieldeffect transistors. It is well known that the quality of metalsemiconductor contacts plays an. The schottky barrier height has a large effect on the specific contact resistivity. This book deals with the basic science of such contacts, and discusses the electrical properties that. A fundamental study of advanced metalsemiconductor contacts. Lau skip to main content we use cookies to distinguish you from other users and to provide you with a better experience on our websites.
To include a comma in your tag, surround the tag with double quotes. One of the most widely used textbooks in this area is donald neamens semiconductor physics and devices. A fundamental difference between a metal and a semiconductor is that the former is unipolar conducts current by means of charges electrons of one sign only, where as a semiconductor is bipolar contains two chargecarrying particles of opposite sign. Tunable electronic interfaces between bulk semiconductors. Semiconductor technologies continue to evolve and amaze us. Its a user clean room facility for semiconductor processing. Metalsemiconductor contacts schottky contacts metal on lightly doped silicon rectifying ohmic contacts metal on heavily doped silicon low resistance 2 november. Whether a given metalsemiconductor junction is an ohmic contact or a schottky barrier depends on the schottky barrier height. Schottky contact at equilibrium metalsemiconductor contact.
Reliable information about the coronavirus covid19 is available from the world health organization current situation, international travel. Semiconductor physics college homework help and online. The metal oxide semiconductor field effect transistor mosfet is one of the cornerstones of modern semiconductor technology. V characteristics of the alsio 2 psi metal insulator semiconductor mis structures has been investigated taking into account the effect of the series resistance r s and interface states n ss at room temperature. Schottky barrier parameters of pdti contacts on ntype inp revealed from ivt and cvt measurements. The paperback of the metal semiconductor contacts by e. In solidstate physics, a metalsemiconductor ms junction is a type of electrical junction in. In an nchannel mos nmos transistor, for example, the source and the drain are two ntype regions that have. Nov 02, 2015 metalsemiconductor contacts kasif nabi imi2015007 department of microelectronics indian institute of information technology allahabad 2nd november 2 november 2015 1 2. Everyday low prices and free delivery on eligible orders.
Metal semiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 3. Books, images, historic newspapers, maps, archives and more. There are free ebooks and tutorials on semiconductor. Asdeposited al and tin contacts to highly doped ngan were ohmic, with roomtemperature specific contact resistivities of 8.
For the junction to admit electrons easily in both directions ohmic contact, the barrier height must be small in at least some parts of the junction surface. Search the catalogue for collection items held by the national library of australia. Metal semiconductor contacts and devices issn kindle edition by cohen, simon s. The second edition adds a large number of endofchapter problems, solved exercises, and a new chapter on metal semiconductor contacts. This course presents indepth discussion and analysis of pn junction and metalsemiconductor contacts including equilibrium behavior, current and capacitance. Before discussing the behaviour of a metal semiconductor boundary, it is first necessary to introduce the concept of the work function. Oclcs webjunction has pulled together information and resources to assist library staff as they consider how to handle coronavirus. Pdf preliminary investigation of agnsi111 schottky. Tin contacts also improved with further heat treatment. As with all of these lecture slides, i am indebted to dr. Then set up a personal list of libraries from your. In modern semiconductor technology, contacts between semiconducting devices and the metal conductors that connect them with the rest of the system are of fundamental importance. Metal semiconductor contacts are an obvious component of any semiconductor device. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices.
Metal semiconductor contacts and devices issn, cohen. Overview of electronic properties of semiconductor. Pnjunctions are of importance for several modern electronic devices like diodes e. What is an ohmic contact and explain briefly about the metal. The work function of a material is the energy required to remove an electron from the level of the chemical potential and give it enough energy to escape to infinity and arrive there with zero energy.
Generally the term ohmic contact implicitly refers to an ohmic contact of a metal to a semiconductor, where achieving ohmic contact resistance is possible but requires. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with pn junctions. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling. In this chapter, we are concerned with the basic physical principles, electrical properties, and applications of the metal semiconductor contacts and devices. There have been considered on the iiiv compound materials like gaas. Metallic contact between mos2 and ni via au nanoglue cover page pdf available in small 1422 may 2018 with 150 reads how we measure reads. A similar principle applies to metal oxide semiconductor mos transistors, but here it is the distance between source and drain that largely determines the operating frequency. However, the higher the doping, the narrower the schottky barrier becomes and the lower the specific contact resistivity will be for a given schottky barrier height. Rhoderick author of introduction to superconductivity. Rhoderick, metalsemiconductor contacts, clarendon press, oxford 1978. Metalsemiconductor contacts kasif nabi imi2015007 department of microelectronics indian institute of information technology allahabad 2nd november 2 november 2015 1 2. The presentday semiconductor technology would be inconceivable without extensive use of schottky barrier junctions.
Rhoderick is the author of metal semiconductor contacts 4. The specific objective of this work is to enhance the physical performance of the quantumwell heterojunction emitted bipolar transistor design in real world applications. The work functions difference between the two material becomes the build in potential for the junction. Fmde 6 where fs and fm are fermidirac distribution functions in metal and semiconductor. High contact resistances can be due to a schottky barrier height. Contacts are almost always metal semiconductor contacts. Most often these junctions are ignored in the analysis of devices, in part because of the difficulty treating. Use features like bookmarks, note taking and highlighting while reading metal semiconductor contacts and devices issn. In solidstate physics, a metalsemiconductor ms junction is a type of electrical junction in which a metal comes in close contact with a semiconductor.
Topics covered include the currentvoltage relationship. Importance of metal semiconductor contacts is due to l ohmic metal semiconductor junctions e. Metalsemiconductor contacts monographs in electrical and. Written for semiconductor technologists and physicists engaged in research on. Lecture 17 metalsemiconductor junction march 14, 2007 contents. Almost all semiconductor devices contain metal semiconductor, insulator semiconductor, insulator metal andor semiconductor semiconductor interfaces. Dieter schroder from arizona state university for his generous contributions and freely given resources. Nielsen book data this text builds a firm foundation in pn junction theory from a conceptual and mathematical viewpoint. The general structure is a lightly doped ptype substrate, into which two regions, the source and the drain, both of heavily doped ntype semiconductor have been embedded. This chapter will address the development of colloidal synthesis of hybrid metalsemiconductor nanocrystals and their application in the field of photocatalysis. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology. Metal semiconductor contacts and devices, volume 1st edition. Ideal metalsemiconductor junction outside equilib rium reading assignment.
Metalinsulatorsemiconductor schottky barrier structures. Electrical characterization of the boron trifluoride doped poly3aminoacetophenonepsi junction. When contacting semiconductor devices one very often includes highly doped semiconductor layers to lower the contact resistance between the semiconductor and the metal contact. Nonohmic contacts come in a number of forms, such as pn junction, schottky barrier, rectifying heterojunction, or breakdown junction. Henisch h k 1957 rectifying semiconductor contacts oxford. Purchase metal semiconductor contacts and devices, volume 1st edition. This second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of modern.
The frequency dependence of capacitancevoltage c v and conductancevoltage g. The ti contacts developed lowresistivity ohmic behavior as a result of annealing. This equation has been tested by making such a plot for an algaas schottky diode made by mbe. Metalsemiconductor contacts are an obvious component of any semiconductor device. Analysis of the actual schottkybarrier contact model in a wide temperature and biasvoltage range analysis of the actual schottkybarrier contact model in a wide temperature and biasvoltage range bozhkov, v zaitzev, s. Printed in great britain current transport in metalsemiconductormetal msm structures s. Alan doolittle school of electrical and computer engineering. Metal to semiconductor ms junctions are of great importance since they are present in every semiconductor device.
Metalsemiconductor contacts 1988 edition open library. This second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of modern semiconductor technology. B is significantly higher than the thermal energy kt, the semiconductor is depleted near the metal and behaves as a schottky barrier. Both ohmic contacts and schottky barriers are dependent on the schottky barrier height, which sets the threshold for the excess energy an electron requires to pass from the semiconductor to the metal. Topics covered include the currentvoltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. They can behave either as a schottky barrier or as an ohmic contact dependent on the characteristics of the interface. For a sufficiently large schottky barrier height, where. The term metal silicon contact includes silicidesi contacts. Williams, metalsemiconductor contacts, 2nd edition, clarendon press, oxford, 1988. Metalsemiconductor hybrid nanoheterostructures for.
Interfaces between nanoscale and bulk electroactive materials are important for the design of electronic devices using solutionprocessed nanoparticles. It is pointed out that the empirical diode relationship i i0 exp qvnkt1 exp qvkt has the property that a plot of log i1 exp qvkt against v should be linear for all values of v, including reverse voltages. The paperback of the metalsemiconductor contacts by e. Engineering and manufacturing science and technology, general fluorides electric properties organic semiconductors composition testing semiconductors semiconductors materials spectroscopy methods spectrum. For example, a schottky diode can be used to study bulk defects and interface properties of a metalsemiconductor system. Ee311 saraswat ohmic contacts 5 for a tunneling contact the net semiconductor to metal current is given by jsm at k. Metalinsulatorsemiconductor schottky barrier structures on gan and 6hsic using highly stable interfacial bn layers have been investigated. Metal semiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 4.
It is well known that the quality of metal semiconductor contacts plays an important role in the performance of various semiconductor devices and integrated circuits. Despite the plethora of examples of differentshaped metalsemiconductor nanostructures that have been reported, metaltipped semiconductor nanorods are perhaps the most intensively studied, and their use as a photocatalyst will. Loya bell telephone laboratories, incorporated, murray hill, new jersey 07974, u. Metalsemiconductor contacts monographs in electrical and electronic engineering e. Further, taking agau as ohmic contact, ptmos2 schottky barrier diode is fabricated with a high rectification ratio of about 900. My goal is to make some very simple samples, for use in student teaching labs. This behaviour is consistent with that of unmodified metal semiconductor diodes, in which the barrier height can depend on the metal s work function. Topics covered include the factors that determine the height of the schottky barrier, its currentvoltage characteristics, and its capacitance. Schottky barrier height an overview sciencedirect topics. How ever, irregularities of the metal film such as varia w.
In addition to different device and circuit applications, schottky contacts can also be used as test vehicles for investigating the physical and electrical properties of a semiconductor material and its surfaces. Electrical characterization of the boron trifluoride doped. Rhoderick, 9780198593362, available at book depository with free delivery worldwide. Electroluminescence from a forwardbiased schottky barrier. This second edition brings a greatly expanded treatment of th. The first task is to make ohmic contacts for transport measurements. Metal germanium contacts and germanide formation volume 47 e.
Analysis of quantumwell heterojunction emitter bipolar. Here we present a systematic study of scaling mos2 devices and contacts with varying. The paper presents the analysis of quantumwell heterojunction emitted bipolar transistor design based on physical parameters with numerical computations. A metal semiconductor junction, as its name implied, is formed by metal making contact to semiconductor. Analysis of the actual schottkybarrier contact model in a. In particular, a large mismatch between the fermi energy of the metal and semiconductor can result is a highresistance rectifying contact. Semiconductor device and material characterization dr. Doitpoms tlp library introduction to semiconductors metal. Heterojunctions and metalsemiconductor junctions ebook. The rectifying properties of metal points on metallic.
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